t4 - lds -0 277 -1, rev . 1 (12 1354 ) ?201 3 microsemi corporation page 1 of 6 1n6103a us C 1n 6137aus available on commercial versions v oidless h ermetically s ealed s urface m ount b idirectional t ransient v oltage s uppressors qualified to mil - prf - 19500/ 516 qualified levels : jan, jantx , jantxv and jans * description this surface mount series of industry recognized voidless, hermetically sealed , b idirectional transient voltage suppressor s (tvs) designs is military qualified to mil - prf - 19500/516 and is ideal for high - reliability applications where a failure cannot be tolerated. they provide a working peak standoff voltage selection from 5. 7 to 152 volts with a 500 w rating for a 10/1000 s pulse . they are very robust in hard - glass construction and internal category 1 metallurgical bond s . these are also available as both a non - suffix part and an a version providing different voltage tolerances as described in the nomenclature section. these devices are also available in axial - leaded packages for thru - hole moun ting . b or sq - melf package also available in : b package ( axial - leaded ) 1n6103 C 1n6137 important: for the latest information, visit our website http://www.microsemi.com . features ? high surge current and peak pulse power provides transient voltage protection for sensitive c ircuits . ? triple - layer passivation . ? internal category 1 metallurgical bonds . ? voidless hermetically sealed glass pac kage . ? jan, jantx, and jantxv qu alified versions are available per mil - prf - 19500/ 516. ? * jans available for 1n6103 (a )us thru 1n6118 (a )us per mil - prf - 19500/516 as well as further options for screening in reference to mil - prf - 19500 for all others in this seri es . (see part nomenclature for all available options.) ? rohs compliant versions available (commercial grade only) . applications / benefits ? military and other high - reliability applications. ? extremely robust construc tion. ? extensive range in w orking p eak s tandoff v oltage (v wm ) from 5.7 to 152 volts. ? 500 w att p eak p ulse p ower (p pp ) for a 10/1000 s pulse . ? esd and eft protection per iec6100 -4- 2 and iec61000 -4- 4 respectively . ? protection from the secondary effects of lig htning pe r select levels in iec61000 -4- 5. ? square - end - cap terminals for easy placement . ? non - sensitive to esd per mil - std - 750 m ethod 1020 . ? inherently radiation hard as described in microsemi micronote 050 . maximum ratings @ t a = 25 o c unless otherwise noted msc C law rence 6 lake street, lawrence, ma 01841 tel: 1- 800 - 446 - 1158 or (978) 620 - 2600 fax: (978) 689 - 0803 msc C ireland gort road business park, ennis, co. clare, ireland tel: +353 (0) 65 6840044 fax: +353 (0) 65 6822298 website: www.microsemi.com parameters/test conditions symbol value unit junction and storage temperature t j and t stg -5 5 to + 175 o c thermal resistance junction - to - end cap r ? j ec 8.3 o c /w peak pulse power @ 25 oc (10/1000 s) p pp 5 00 w s teady - state power up to t ec = 150 o c (1) p d 3.0 w s teady - state power @ t a = 25 o c (2) p d 2.0 w impulse repetition rate df 0.01 % solder temperature @ 10 s t sp 260 o c notes : 1. linearly derate above t ec =150 o c to zero at t ec =175 o c. 2. steady - state power ratings with reference to ambient are for pc boards where thermal resistance from mounting point to ambient is sufficiently controlled where m aximum rated t j is not exceeded (also see f igure 4 ). downloaded from: http:///
t4 - lds -0 277 -1, rev . 1 (12 1354 ) ?201 3 microsemi corporation page 2 of 6 1n6103a us C 1n 6137aus mech anical and packaging ? case: hermetically sealed voidless hard glass with t ungsten slugs . ? terminals: t in/ l ead plate over c opper. rohs compliant matte -t in is available on commercial grade only. ? marking: none . ? polarity: no polarity marking for these bidirectional tvss . ? tape & ree l option: standard per eia - 481 -b . consult factory for quantities. ? weight: approximately 539 m illigrams . ? see p ackage d imensions on last page. part nomenclature applicable to entire ser ies: jan 1n6103 a us (e3) reliability level jan = jan level jantx = jantx level jantxv = jantxv level blank = c ommercial jedec type number see electrical characteristics t able rohs compliance e3 = roh s c ompliant ( available on commercial grade only ) blank = non - rohs c ompliant surface mount package voltage tolerance a = standard blank = 5% higher v c , 5% lower min. v (br) and 5% lower i pp applicable to 1n6103 (a) us C 1n6118 (a) us only: jans 1n6103 a us reliability level jans = jans level jedec type number see electrical characteristics t able surface mount package voltage tolerance a = standard blank =5% higher v c , 5% lower min. v (br) and 5% lower i pp applicable to 1n6119 (a) us C 1n6137 (a) us only : msp 1n6119 a us (e3) reliability level msp (reference jans) jedec type number see electrical characteristics t able rohs compliance e3 = rohs c ompliant blank = non - rohs c ompliant surface mount package voltage tolerance a = standard blank =5% higher v c , 5% lower min. v (br) and 5% lower i pp downloaded from: http:///
t4 - lds -0 277 -1, rev . 1 (12 1354 ) ?201 3 microsemi corporation page 3 of 6 1n6103a us C 1n 6137aus symbols & definitions symbol definition v ( br) minimum breakdown voltage: the minimum voltage the device will exhibit at a specified current. v wm working peak voltage: the maximum peak voltage that can be applied over the operating temperature rang e. this is also referred to as standoff voltage. i d maximum standoff current: the maximum current that will flow at the specified voltage an d temperature. v c maximum clamping voltage at specified i pp (peak pulse current) at the specified pulse conditions. p pp peak pulse power: the peak power dissipation resulting from the peak impulse current i pp . electric al characteristics industry type number (note 1) minimum breakdown voltage (note 1) v (br) @ i (br) rated standoff voltage v wm maximum standby current i d @ v wm maximum clamping voltage (note 1) v c @ i pp maximum peak pulse current (note 1) i pp maximum temp. coef. of v ( br) v (br) volts ma v a volts amps %/ o c ? 1n6103a us 7.13 175 5.7 50 11.2 44.6 .06 ? 1n6104a us 7.79 150 6.2 20 12.1 41.3 .06 ? 1n6105a us 8.65 150 6.9 20 13.4 37.3 .06 ? 1n6106a us 9.50 125 7.6 20 14.5 34.5 .07 ? 1n6107a us 10.45 125 8.4 20 15.6 32.0 .07 ? 1n6108a us 11.40 100 9.1 20 16.9 29.6 .07 ? 1n6109a us 12.35 100 9.9 20 18.2 27.5 .08 ? 1n6110a us 14.25 75 11.4 20 21.0 23.8 .08 ? 1n6111a us 15.20 75 12.2 20 22.3 22.4 .08 ? 1n6112a us 17.10 65 13.7 1 25.1 19.9 .085 ? 1n6113a us 19.0 65 15.2 1 27.7 18.0 .085 ? 1n6114a us 20.9 50 16.7 1 30.5 16.4 .085 ? 1n6115a us 22.8 50 18.2 1 33.3 15.0 .09 ? 1n6116a us 25.7 50 20.6 1 37.4 13.4 .09 ? 1n6117a us 28.5 40 22.8 1 41.6 12.0 .09 ? 1n6118a us 31.4 40 25.1 1 45.7 10.9 .095 1n6119a us 34.2 30 27.4 1 49.9 10.0 .095 1n6120a us 37.1 30 29.7 1 53.6 9.3 .095 1n6121a us 40.9 30 32.7 1 59.1 8.5 .095 1n6122a us 44.7 25 35.8 1 64.6 7.7 .095 1n6123a us 48.5 25 38.8 1 70.1 7.1 .095 1n6124a us 53.2 20 42.6 1 77.0 6.5 .095 1n6125a us 58.9 20 47.1 1 85.3 5.9 .10 0 1n6126a us 64.6 20 51.7 1 97.1 5.1 .100 1n6127a us 71.3 20 56.0 1 103.1 4.8 .100 1n6128a us 77.9 15 62.2 1 112.8 4.4 .100 1n6129a us 86.5 15 69.2 1 125.1 4.0 .100 1n6130a us 95.0 12 76.0 1 137.6 3.6 .100 1n6131a us 104.5 12 86.6 1 151.3 3.3 .100 1n6132a us 114.0 10 91.2 1 165.1 3.0 .100 1n6133a us 123.5 10 98.8 1 178.8 2.8 .105 1n6134a us 142.5 8 114.0 1 206.3 2.4 .105 1n6135a us 152.0 8 121.6 1 218.4 2.3 .105 1n6136a us 171.0 5 136.8 1 245.7 2.0 .110 1n6137a us 190.0 5 152.0 1 273.0 1.8 .110 ? also available in jans qualification per mil - prf - 19500/516. notes: 1. part number without the a suffix has 5% higher v c , 5% lower minimum v (br) , and 5% lower i pp . downloaded from: http:///
t4 - lds -0 277 -1, rev . 1 (12 1354 ) ?201 3 microsemi corporation page 4 of 6 1n6103a us C 1n 6137aus graphs pulse time (t p ) figure 1 peak pulse power vs. pulse time junction temperature (t j ) in c figure 2 peak pulse power vs t j (prior to impulse) peak pulse power (p pp ) max peak pulse power (p pp ) or current (i pp ) in percent of max ratings downloaded from: http:///
t4 - lds -0 277 -1, rev . 1 (12 1354 ) ?201 3 microsemi corporation page 5 of 6 1n6103a us C 1n 6137aus graphs time (t) in milliseconds figure 3 pulse wave form t a (c) (ambient) figure 4 temperature - power derating curve pulse current ( i pp) in percent of i pp dc operation maximum rating (w) downloaded from: http:///
t4 - lds -0 277 -1, rev . 1 (12 1354 ) ?201 3 microsemi corporation page 6 of 6 1n6103a us C 1n 6137aus package dimensions notes: 1 . d imension s are in inches . 2 . m illime ters are gi ven for gene ral in for ma t io n onl y. 3 . minimum clearance of glass body to mounting surface on all orientations . 4 . in acco r danc e wi th asme y 14 .5m, diame ters are equi v alen t to x sy mbolog y. pad layout note: if mounting requires adhesive separate from the solder, an additional 0.080 inch (2.03 mm) diameter contact may be placed in the center between the pads as an optional spot for cement. ltr d ime n si ons not es i nc h m illime ters min max min max bd 0 .137 0 .148 3.48 3.76 bl 0 .200 0 .225 5.08 5.72 ect 0 .019 0 .028 0.48 0.71 s 0 .003 - 0.08 - 4 dim inch millimeters a1 0.288 7.32 a2 0.144 3.66 b 0.070 1.78 c 0.155 3.94 downloaded from: http:///
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